skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Search for: All records

Creators/Authors contains: "Pan, Hao"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Free, publicly-accessible full text available August 19, 2026
  2. Abstract The analysis of social and biological networks often involves modeling clusters of interest ascliquesor their graph‐theoretic generalizations. The ‐club model, which relaxes the requirement of pairwise adjacency in a clique to length‐bounded paths inside the cluster, has been used to model cohesive subgroups in social networks and functional modules or complexes in biological networks. However, if the graphs are time‐varying, or if they change under different conditions, we may be interested in clusters that preserve their property over time or under changes in conditions. To model such clusters that are conserved in a collection of graphs, we consider across‐graph‐clubmodel, a subset of nodes that forms a ‐club in every graph in the collection. In this article, we consider the canonical optimization problem of finding a cross‐graph ‐club of maximum cardinality in a graph collection. We develop integer programming approaches to solve this problem. Specifically, we introduce strengthened formulations, valid inequalities, and branch‐and‐cut algorithms based on delayed constraint generation. The results of our computational study indicate the significant benefits of using the approaches we introduce. 
    more » « less
    Free, publicly-accessible full text available December 1, 2025
  3. There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO3)/ferroelectric (BaTiO3)/metal oxide (SrRuO3) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO3 using a NaIO4 solution and dry etching using an Ar+-ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar+ beam can introduce defects into the SrRuO3/BaTiO3/SrRuO3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications. 
    more » « less
  4. Abstract Stabilization of topological spin textures in layered magnets has the potential to drive the development of advanced low-dimensional spintronics devices. However, achieving reliable and flexible manipulation of the topological spin textures beyond skyrmion in a two-dimensional magnet system remains challenging. Here, we demonstrate the introduction of magnetic iron atoms between the van der Waals gap of a layered magnet, Fe3GaTe2, to modify local anisotropic magnetic interactions. Consequently, we present direct observations of the order-disorder skyrmion lattices transition. In addition, non-trivial topological solitons, such as skyrmioniums and skyrmion bags, are realized at room temperature. Our work highlights the influence of random spin control of non-trivial topological spin textures. 
    more » « less
    Free, publicly-accessible full text available December 1, 2025
  5. The analysis of social and biological networks often involves model- ing clusters of interest as cliques or their graph-theoretic generaliza- tions. The 𝑘-club model, which relaxes the requirement of pairwise adjacency in a clique to length-bounded paths inside the cluster, has been used to model cohesive subgroups in social networks and functional modules/complexes in biological networks. However, if the graphs are time-varying, or if they change under different conditions, we may be interested in clusters that preserve their property over time or under changes in conditions. To model such clusters that are conserved in a collection of graphs, we consider a cross-graph 𝑘-club model, a subset of nodes that forms a 𝑘-club in every graph in the collection. In this paper, we consider the canonical optimization problem of finding a cross-graph 𝑘-club of maximum cardinality. We introduce algorithmic ideas to solve this problem and evaluate their performance on some benchmark instances. Published in: Proceedings of The International Network Optimization Conference (INOC) 2022, Aachen, Germany 
    more » « less
  6. Abstract The pursuit of smaller, energy‐efficient devices drives the exploration of electromechanically active thin films (<1 µm) to enable micro‐ and nano‐electromechanical systems. While the electromechanical response of such films is limited by substrate‐induced mechanical clamping, large electromechanical responses in antiferroelectric and multilayer thin‐film heterostructures have garnered interest. Here, multilayer thin‐film heterostructures based on antiferroelectric PbHfO3and ferroelectric PbHf1‐xTixO3overcome substrate clamping to produce electromechanical strains >4.5%. By varying the chemistry of the PbHf1‐xTixO3layer (x = 0.3‐0.6) it is possible to alter the threshold field for the antiferroelectric‐to‐ferroelectric phase transition, reducing the field required to induce the onset of large electromechanical response. Furthermore, varying the interface density (from 0.008 to 3.1 nm−1) enhances the electrical‐breakdown field by >450%. Attaining the electromechanical strains does not necessitate creating a new material with unprecedented piezoelectric coefficients, but developing heterostructures capable of withstanding large fields, thus addressing traditional limitations of thin‐film piezoelectrics. 
    more » « less
  7. Abstract Highly responsive, voltage‐tunable dielectrics are essential for microwave‐telecommunication electronics. Ferroelectric/relaxor materials have been leading candidates for such functionality and have exhibited agile dielectric responses. Here, it is demonstrated that relaxor materials developed from antiferroelectrics can achieve both ultrahigh dielectric response and tunability. The system, based on alloying the archetypal antiferroelectric PbZrO3with the dielectric BaZrO3, exhibits a more complex phase evolution than that in traditional relaxors and is characterized by an unconventional multi‐phase competition between antiferroelectric, ferroelectric, and paraelectric order. This interplay of phases can greatly enhance the local heterogeneities and results in relaxor characteristics while preserving considerable polarizability. Upon studying Pb1‐xBaxZrO3forx= 0‐0.45, Pb0.65Ba0.35ZrO3is found to provide for exceptional dielectric tunability under low bias fields (≈81% at 200 kV cm−1and ≈91% at 500 kV cm−1) at 10 kHz, outcompeting most traditional relaxor ferroelectric films. This high tunability is sustained in the radio‐frequency range, resulting in a high commutation quality factor (>2000 at 1 GHz). This work highlights the phase evolution from antiferroelectrics (with lower, “positive” dielectric tunability) to relaxors (with higher, “negative” tunability), underscoring a promising approach to develop relaxors with enhanced functional capabilities and new possibilities. 
    more » « less
  8. null (Ed.)